Web of Science Core Collection Handbook (pdf).Web of Science Core Collection Brochure (pdf).Search string with various name variants for our institute.ĪD=(((FRITZ HABER INST) OR FHI) SAME BERLIN)

This unique feature allows you to retrieve for any bibliographic record in the database its cited references, related articles and articles that cite this work. The databases support cited reference searching. The Web of Science (WoS) is a platform that offers a collection of several databases.Īuthoritative, multidisciplinary content covers over 21,000 of the highest impact journals worldwide, including Open Access journals, as well as over 225,000 conferences and more than 123,000 editorially selected books. The licensed databases are IP-protected and can only be accessed from a valid domain within the MPS. Use the MPG Resource Navigator to identify more relevant resources. The lateral dimensions of individual chips were 4 × 5 mm 2 with electron transparent SiO 2 viewing membrane windows in the center with the size of 30 × 70 μm 2 (for TEM imaging).The following licensed databases are available in the MPG. The SiO 2 membrane was thinned down from 145 to 45 nm by etching in 5 wt % TMAH. After the DRIE, the exposed Si was etched from the backside of the wafer in a 30% (w/v) KOH solution, releasing the SiO 2 membrane. Central viewing windows and grooves for cleaving individual chips were patterned on the backside SiN x layer using a conventional photolithography process, followed by deep reactive ion etching (DRIE) of the exposed SiN x. Then, these 300 mm wafers were diced into smaller pieces measuring 72 × 72 mm 2, which were used for the fabrication of chips with nanowires ( Figure S1B). The circular top-down profiles reveal that the resulting nanowires are indeed cylindrical. Figure 5D shows the nanowire array obtained after 4 s of stirred etching, followed by 5 s of stationary etching. Here, by imaging KOH wet etching of c-Si nanowires, we show that it is possible to switch the fast-etching direction (i.e., the etch anisotropy) between the Si planes, as shown in Figure 5A–C. Controlled fabrication of c-Si nanostructures requires an understanding of how crystal planes evolve during silicon etching. Anisotropic wet etching of crystalline silicon (c-Si) is a key chemical process used in microelectronic device fabrication.

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